A Pathway to Thin GaAs Virtual Substrate on On‐Axis Si (001) with Ultralow Threading Dislocation Density

Low threading dislocation density GaAs growth on on-axis GaP/Si (001)

EXTERNAL QUANTUM EFFICIENCY MODELING OF GaAs SOLAR CELLS GROWN ON Si: A METHOD TO ASSESS THE THREADING DISLOCATION DENSITY

A method is reported in order to determine an upper bound for the Threading Dislocation (TD) density in experimental GaAs solar cells grown lattice-mismatched on Si. The method is based on the modeling of the devices’ External Quantum Efficiency (EQE), using the classic drift-diffusion model, or Hovel model. The model is fitted to experimental EQE measurements, using the diffusion length of min...

Nanoepitaxy of GaAs on a Si(001) substrate using a round-hole nanopatterned SiO2 mask.

GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number of dislocations. The etching pit density of GaAs on the 55 nm round-hole patterned Si substrate is about 3.3 × 10(5) cm(-2). Compared with the full w...

CUBIC GaN HETEROEPITAXY ON THIN-SiC-COVERED Si(001)

We have investigated the growth conditions of cubic GaN (β-GaN) layers on very thin SiC-covered Si(001) by using gas-source molecular beam epitaxy as functions of SiC layer thickness, Ga-cell temperature and substrate temperature. Under the present SiC formation conditions on Si substrates by carbonization using C2H2 gas, the SiC layers with the thickness between 2.5 and 4 nm result in the epit...

Reconstruction and intermixing in thin Ge layers on Si „ 001 ...

In this work the Monte Carlo method with an empirical potential model for atomic interactions is applied to study reconstruction and intermixing at a Ge-covered Si~001! surface. We investigate the structure and energetics of the 23n reconstruction which serves as a strain-relief mechanism. The optimal value of n is found to be strongly dependent on the thickness of the Ge overlayer. Si-Ge inter...